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PDMB600E6C - IGBT Module-Dual

PDMB600E6C_7822535.PDF Datasheet

Part No.

PDMB600E6C

Description

IGBT Module-Dual

File Size

285.43K / 4 Page

Maker

Nihon Inter Electronics Corporation

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: PDMB600E6

Maker: N/A

Pack: N/A

Stock: 58

Unit price for :

50: $150.65

100: $143.11

1000: $135.58

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Homepage

http://www.niec.co.jp/

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FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 75A I(C) \| M:HL093HD5.6 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 150A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 100A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1KV V(BR)CES \| 50A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 8A条一（c TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 15A I(C) \| M:HL080HD5.3 晶体管\| IGBT的\|正陈\|双\| 1KV交五（巴西）国际消费电子展\|5A一（c）\|米：HL080HD5.3 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 75A条一（c	Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
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CM400DU-24H	Dual IGBTMOD U-Series Module 400 Amperes/1200 Volts Dual IGBTMOD⑩ U-Series Module 400 Amperes/1200 Volts TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1.2KV V(BR)CES \| 400A I(C)	Powerex Power Semiconductors
MG600J2YS60A	IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT	TOSHIBA[Toshiba Semiconductor]
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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